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Photo Receiver Product List

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2GHz Photo Receiver (HSA-X-S Series)

A high-performance 2GHz photoreceiver that combines cutting-edge photodiode technology with GHz amplifiers from Femto.

- The diode type is made of Si/InGaAs, with wavelength ranges of 320–1000nm/850–1700nm respectively. - The Si model HSA-X-S-1G4-SI has a ball range placed on the front of the detector chip, with an active area diameter of 0.8mm. - The transimpedance is 5×10^3 V/A. - The minimum NEP is only 14pW/vHz, making it measurable even at μW range optical power levels.

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400MHz Photo Receiver (HCA-S-400 Series)

400MHz photoreceiver combining high-speed photodiode technology and high-speed current amplifier from Femto.

- There are two types of diodes: Si and InGaAs, with wavelength ranges of 320–1000nm and 900–1700nm, respectively. - The transimpedance is 5×10^3 V/A, and the maximum conversion gain for the InGaAs model at 1550nm is 5×10^3 V/W. - The sophisticated DC-coupled multi-stage amplifier design allows for measurements with a bandwidth of DC–400MHz, corresponding to a minimum rise time of 1ns. - Due to low noise, measurements can be taken without averaging even with light levels of a few μW. - The input can be free space or fiber coupled.

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  • Photo Receiver

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400kHz photoreceiver (LCA-S-400 series)

A large-diameter 400kHz photoreceiver that combines cutting-edge photodiode technology with low-noise current amplifier technology.

■The photodiodes used are made of Si or InGaAs, with wavelength ranges of 400–1050nm and 900–1700nm, respectively. ■The transimpedance is 10^7 V/A, and the maximum conversion gain is 9.5×10^6 V/W at 1550nm for the InGaAs model. ■The minimum NEP is approximately 75 fW/√Hz, allowing for the measurement of light signals in the nanowatt range without unnecessary averaging.

  • Other optical parts
  • Other measurement, recording and measuring instruments
  • Photo Receiver

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200MHz Photo Receiver (HCA-S-200 Series)

200MHz photoreceiver combining high-speed photodiode technology and high-speed current amplifier from Femto.

- There are two types of diodes: Si-based and InGaAs-based, with wavelength ranges of 320–1000nm and 900–1700nm, respectively. - The transimpedance is 2×10^4 V/A, and the maximum conversion gain for the InGaAs model at 1550nm is 2×10^4 V/W. - Thanks to a sophisticated DC-coupled multi-stage amplifier design, measurements with a bandwidth of DC–200MHz corresponding to a minimum rise time of 1.8ns are possible. - The minimum NEP value is approximately 6pW/√Hz, allowing for the detection of optical power signals in the μW range without unnecessary averaging.

  • Other optical parts
  • Other measurement, recording and measuring instruments
  • Photo Receiver

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